[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

△ [11p-PB3-13] DC characteristics of AlGaN/GaN vertical trench MOS-HEMTs: Effects of Mg doping

〇(M2)Keito Kanatani¹, Naofumi Yoneda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:semiconductor, GaN, HEMT

The fabrication of vertical AlGaN/GaN HEMT, as an alternative of vertical GaN-based MIS-FET having problems such as low mobility and large hysteresis, were investigated. Based on the evaluation of AlGaN/GaN hetero-structures prepared with AlGaN regrowth on RIE-GaN surfaces, the fabrication processes of the vertical device were optimized. As a result of that, a device with a drain current of about 1 A/mm and normally-off operation was realized.