[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-7] Resolution of H1 spectra in MOVPE n-GaN by optical DLTS

〇(M1)Syun Ito¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

Keywords:Optical Deep Level Transient Spectroscopy, Minority Carrier Transient Spectroscopy

It is possible that MCTS spectra using the above-bandgap light pulses for hole trap H1 in MOVPE n-GaN consist of several traps with close energy levels. To resolve MCTS spectra for H1, ODLTS using the below-bandgap light pulses were performed under the isothermal condition. Samples used were n-GaN grown by MOVPE on GaN and SiC substrates. It is shown that a peak in ODLTS spectra shifted to longer hole emission time constants. Moreover, a larger shift in hole emission time constants was observed in n-GaN on SiC. This suggests that different hole traps exist between n-GaN on GaN and SiC. To resolve these hole traps, ODLTS measurement are now being performed at various temperatures.