The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-5] Mapping of photo-electrochemical etched Ni/n-GaN Schottky contacts
using scanning internal photoemission microscopy

Ryo Matsuda1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Tomoyoshi Mishima3, Kenji Shiojima1 (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, photo-electrochemical etching

In this paper, we present the experimental results on mapping characterization of selectively photo-electochemical etched GaN Schottky contacts by using scanning internal photoemission microscopy. In the periphery of the etched region, large photocurrent and low Schottky barrier height were observed. In this study, as the etched region was defined by irradiating UV light beam, the inclined facet was formed during the etching.