Ryosuke Murase

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

[9a-M121-9] Temperature Coefficients of Schottky Barrier Heights of Homoepitaxial n-type GaN for Various Schottky Metals

〇Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita^1,2,3, Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS Nagoya Univ.)