Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[9a-M121-1] Transient photo-assisted capacitance characterization of deep states at insulator/wide-bandgap semiconductor interface

〇Atsushi Hiraiwa^1,2, Satoshi Okubo³, Kiyotaka Horikawa³, Hiroshi Kawarada^1,2,3,4 (1.RONLI, Waseda Univ., 2.IMaSS, Nagoya Univ., 3.FSE, Waseda Univ., 4.KMLMST, Waseda Univ.)

9:45 AM - 10:00 AM

[9a-M121-2] Photoemission Study of HfSiO_x/GaN Structure

〇Akio Ohta¹, Makihara Katunori¹, Toshihide Nabatame², Koji Shiozaki¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.NIMS.)

10:00 AM - 10:15 AM

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO₂/GaN Interface

〇Mutsunori Uenuma¹, Ryota Ando¹, Masaaki Furukawa¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

10:15 AM - 10:30 AM

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO₂/GaN MOS Devices

〇Takahiro Yamada¹, Yuhei Wada¹, Daiki Terashima¹, Mikito Nozaki¹, Katsunori Ueno², Shinya Takashima², Hisashi Yamada³, Tokio Takahashi³, Mitsuaki Shimizu³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric, 3.AIST)

10:30 AM - 10:45 AM

[9a-M121-5] Electron mobility in a channel formed at an Al₂O₃/GaN interface

〇Noriyuki Taoka¹, Trung Nguyen Huu¹, Hisashi Yamada¹, Tokio Takahashi¹, Mitsuaki Shimizu^1,2 (1.AIST-NU GaN-OIL, 2.IMaSS)

10:45 AM - 11:00 AM

△ [9a-M121-6] Theoretical prediction of disappearance of Ga₂O₃layer at the n-GaN/Al₂O₃interfaces

〇(D)Kenta Chokawa¹, Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

11:15 AM - 11:30 AM

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

〇(M1)Keito Aoshima¹, Shota Kaneki², Masahiro Horita^1,3, Jun Suda^1,3, Tamotsu Hashizume² (1.Nagoya Univ., 2.RCIQE, Hokkaido Univ., 3.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al₂O₃/AlGaN/GaN structures by AlGaN layer regrowth

〇(M1C)Shinsaku Kawabata¹, Joel Asubar¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Fukui Univ)

11:45 AM - 12:00 PM

[9a-M121-9] Temperature Coefficients of Schottky Barrier Heights of Homoepitaxial n-type GaN for Various Schottky Metals

〇Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita^1,2,3, Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS Nagoya Univ.)

12:00 PM - 12:15 PM

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

〇Kazutaka Kanegae¹, Hajime Fujikura², Yohei Otoki², Taichiro Konno², Takehiro Yoshida², Masahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.SCIOCS Co., Ltd., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

12:15 PM - 12:30 PM

[9a-M121-11] Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure

〇(B)Shohei Rokuno¹, Keisuke Sakao², Masahiro Horita^2,3, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate School, 3.IMaSS, Nagoya Univ.)

Session information

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

[9a-M121-1] Transient photo-assisted capacitance characterization of deep states at insulator/wide-bandgap semiconductor interface

[9a-M121-2] Photoemission Study of HfSiO_x/GaN Structure

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO₂/GaN Interface

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO₂/GaN MOS Devices

[9a-M121-5] Electron mobility in a channel formed at an Al₂O₃/GaN interface

△ [9a-M121-6] Theoretical prediction of disappearance of Ga₂O₃layer at the n-GaN/Al₂O₃interfaces

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al₂O₃/AlGaN/GaN structures by AlGaN layer regrowth

[9a-M121-9] Temperature Coefficients of Schottky Barrier Heights of Homoepitaxial n-type GaN for Various Schottky Metals

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

[9a-M121-11] Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure

Authentication

Session information

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

[9a-M121-1] Transient photo-assisted capacitance characterization of deep states at insulator/wide-bandgap semiconductor interface

[9a-M121-2] Photoemission Study of HfSiOx/GaN Structure

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO2/GaN Interface

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO2/GaN MOS Devices

[9a-M121-5] Electron mobility in a channel formed at an Al2O3/GaN interface

△ [9a-M121-6] Theoretical prediction of disappearance of Ga2O3layer at the n-GaN/Al2O3interfaces

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al2O3/GaN MOS Diodes Due to Gamma-Ray Irradiation

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth

[9a-M121-9] Temperature Coefficients of Schottky Barrier Heights of Homoepitaxial n-type GaN for Various Schottky Metals

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

[9a-M121-11] Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure

Authentication

[9a-M121-2] Photoemission Study of HfSiO_x/GaN Structure

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO₂/GaN Interface

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO₂/GaN MOS Devices

[9a-M121-5] Electron mobility in a channel formed at an Al₂O₃/GaN interface

△ [9a-M121-6] Theoretical prediction of disappearance of Ga₂O₃layer at the n-GaN/Al₂O₃interfaces

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al₂O₃/AlGaN/GaN structures by AlGaN layer regrowth