Shohei Rokuno

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

12:15 PM - 12:30 PM

[9a-M121-11] Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure

〇(B)Shohei Rokuno¹, Keisuke Sakao², Masahiro Horita^2,3, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate School, 3.IMaSS, Nagoya Univ.)