The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Keita Konishi(Tokyo Univ. of Agri. and Tech.)

10:30 AM - 10:45 AM

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga2O3 Schottky Barrier Diodes

〇Jun Arima1, Jun Hirabayashi1, Minoru Fujita1, Daisuke Inokuchi1, Kohei Sasaki2, Akito Kuramata2, Shigenobu Yamakoshi3, Yoshiaki Fukumitsu1 (1.TDK Corp, 2.Novel Crystal Tech, 3.Tamura Corp)

Keywords:semiconductor, power devices