Takuya Maeda

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[9p-M121-1] Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in
GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:15 PM - 2:30 PM

[9p-M121-2] Estimation of Impact Ionization Coefficients in GaN by
Photomultiplication Measurements Utilizing Franz-Keldysh Effect

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ,, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ,)

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[11p-PB3-18] Simulation Study on Electric Field in GaN PN Diodes with Beveled-Mesa Structure

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunonobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)