Masahiro Horita

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:00 AM - 12:15 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[11a-M121-5] Deep levels introduced by 2-MeV electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Tsutomu Uesugi³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs., Inc.)

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