[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-14] Study on effect of buffer trap to transient response and drain leakage of GaN HEMTs by TCAD

〇Toshiyuki Oishi¹ (1.Saga Univ.)

Keywords:GaN HEMT, buffer trap, transient response

The effects of buffer traps in GaN HEMTs to drain leakage current and transient response have been investigated by TCAD. When channel thickness decreases, the drain leakage current decreases and transient response don't improve. Suppression of short channel effect results to occure gate lag (drain current decrease for bias voltgae from off to on stete). Furthermore, in the case of no buffer trap, drain leakage current increase although good transient response is obtained.