[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

▼ [11p-PB3-1] Trapping reduction of SiO₂/GaN MOS structure by high pressure water vapor annealing

〇(DC)LIN TENGDA¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)

Keywords:GaN-SiO2 MOS, reliability, post annealing

High pressure water vapor annealing (HPWVA) is applyed and aimed to improve the reliability of GaN/SiO2 MOS structure. Through the constant current stressed time dependent dielectric breakdown (TDDB) measurements and a kinetic theoretical analysis, HPWVA sample exhibit longer lifetime and smaller electron trapping behavior.