[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

Keywords:Ga2O3, ion implantation, back-barrier

β-Ga₂O₃ has recently captured significant attention as the next high performance power electronics material. Opportunities also exist for β-Ga₂O₃ transistors to operate as amplifiers capable of GHz switching speeds. As the gate length of the devices decreases to allow for higher frequency of operation, improved confinement of the electron channel – typically achieved through a back-barrier with p-type doping or a wider bandgap – becomes critical for mitigating short-channel effects. This work capitalizes on the deep acceptor nature of nitrogen in β-Ga₂O₃ for back-barrier doping in lateral β-Ga₂O₃ MOSFETs.