QIN MAO

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Speaker, Author, Co-Author

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

〇QIN MAO¹, Eiki Suzuki¹, Atsushi Tamura¹, Koji Kita¹ (1.The Univ. of Tokyo)