The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Keita Konishi(Tokyo Univ. of Agri. and Tech.)

10:00 AM - 10:15 AM

▲ [12a-M121-5] Reduction of the density of defects at the SiO2/Ga2O3 MOS interface by the combination of high-temperature O2 annealing and low-temperature H2 annealing

〇QIN MAO1, Eiki Suzuki1, Atsushi Tamura1, Koji Kita1 (1.The Univ. of Tokyo)

Keywords:Ga2O3, MOS capacitor, Interface defect

To reveal the effect of annealing on SiO2/Ga2O3 MOS interface, MOS capacitors were fabricated with various annealing conditions. We found the reduction of the density of defects by the combination of high-temperature O2 annealing and low-temperature H2 annealing.