Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Keita Konishi(Tokyo Univ. of Agri. and Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-M121-1] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation (II)

〇Chiahung Lin¹, Yohei Yuda², Man Hoi Wong¹, Mayuko Sato³, Nao Takekawa³, Keita Konishi³, Tatsuro Watahiki², Mikio Yamamuka², Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki¹ (1.NICT, 2.Mitsubishi Electric Corp., 3.Tokyo Univ. of Agri. & Tech.)

9:15 AM - 9:30 AM

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

9:30 AM - 9:45 AM

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

9:45 AM - 10:00 AM

[12a-M121-4] Normally-Off β-Ga₂O₃ MOSFET with Nitrogen-Doped Channel

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Man Hoi Wong¹, Hong Phuc Than¹, Masataka Higashiwaki¹ (1.NICT)

10:00 AM - 10:15 AM

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

〇QIN MAO¹, Eiki Suzuki¹, Atsushi Tamura¹, Koji Kita¹ (1.The Univ. of Tokyo)

10:30 AM - 10:45 AM

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga₂O₃ Schottky Barrier Diodes

〇Jun Arima¹, Jun Hirabayashi¹, Minoru Fujita¹, Daisuke Inokuchi¹, Kohei Sasaki², Akito Kuramata², Shigenobu Yamakoshi³, Yoshiaki Fukumitsu¹ (1.TDK Corp, 2.Novel Crystal Tech, 3.Tamura Corp)

10:45 AM - 11:00 AM

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

Yuma Ishimatsu¹, Toshiyuki Oishi¹, Takuya Kamogawa¹, Saha Niloy Chandra¹, Seong-Woo Kim², 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

11:00 AM - 11:15 AM

[12a-M121-8] Formation of Diamond/Cu direct bonding for power device application

〇Jianbo Liang¹, Shinji Kanda¹, Satoshi Masuya², Makoto Kasu², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Saga Univ.)

11:15 AM - 11:30 AM

[12a-M121-9] Application of 50kW-Crass Super-High Power Transistor to EV Control

〇Kensho Okamoto¹, Masami Hosokawa², Fumio Matsushita², Itsuo Nakano³ (1.Kagawa Univ., 2.Optosemicon. Labo., 3.Okayama Univ.)

Session information

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

[12a-M121-1] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation (II)

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

[12a-M121-4] Normally-Off β-Ga₂O₃ MOSFET with Nitrogen-Doped Channel

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga₂O₃ Schottky Barrier Diodes

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

[12a-M121-8] Formation of Diamond/Cu direct bonding for power device application

[12a-M121-9] Application of 50kW-Crass Super-High Power Transistor to EV Control

Authentication

Session information

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

[12a-M121-1] Vertical Ga2O3 Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation (II)

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga2O3 MOSFETs with Nitrogen-Doped Current Blocker

▲ [12a-M121-3] β-Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

[12a-M121-4] Normally-Off β-Ga2O3 MOSFET with Nitrogen-Doped Channel

▲ [12a-M121-5] Reduction of the density of defects at the SiO2/Ga2O3 MOS interface by the combination of high-temperature O2 annealing and low-temperature H2 annealing

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga2O3 Schottky Barrier Diodes

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

[12a-M121-8] Formation of Diamond/Cu direct bonding for power device application

[12a-M121-9] Application of 50kW-Crass Super-High Power Transistor to EV Control

Authentication

[12a-M121-1] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation (II)

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

[12a-M121-4] Normally-Off β-Ga₂O₃ MOSFET with Nitrogen-Doped Channel

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga₂O₃ Schottky Barrier Diodes