Satomu Furuta

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:00 AM - 12:15 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

[11a-M121-9] Deep level traps in GaN by high-temperature thermal treatment with SiN cap

〇Satomu Furuta¹, Masahiro Horita^2,3, Nariaki Tanaka⁴, Tohru Oka⁴, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate school, 3.IMASS Nagoya Univ., 4.Toyota Gosei)

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