The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-9] GaN-channel HEMT with Al0.05Ga0.95N back barrier on high-resistivity Si substrate

〇Takuya Hoshi1, Sugiyama Hiroki1, Nakajima Fumito1, Matsuzaki Hideaki1 (1.NTT Device Technology Labs, NTT Corporation)

Keywords:GaN-channel HEMT, AlGaN back barrier, High-resistivity Si substrate