The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-23] Analysis of SiC/Si bonding interface with thermal annealing treatment by XPS

Zexin Wan1, Jianbo Liang1, Naoteru Shigekawa1 (1.Osaka City Univ.)

Keywords:surface activated bonding, power device, SiC/Si heterojunction