[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-4] Photoluminescence studies on various Mg ion-implanted GaN

〇Shigefusa Chichibu^1,2,3, Kohei Shima¹, Hiroko Iguchi⁴, Tetsuo Narita⁴, Keita Kataoka⁴, Kazunobu Kojima¹, Akira Uedono⁵ (1.Tohoku Univ., 2.Nagoya Univ., 3.Hokkaido Univ., 4.Toyota Central RDL, 5.Univ. of Tsukuba)

Keywords:Nitride Semiconductors, Mg ion-implantation, Time-resolved photoluminescence

One of the challenging issues for producing vertically current flowing GaN power devices at low cost is the control of conductivity type and conductivity at designated segments using an ion-implantation technique, especially Mg implantation. In this presentation we will compare the PL and TRPL properties of various Mg-implanted GaN/