[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-5] Deep levels introduced by 2-MeV electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Tsutomu Uesugi³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs., Inc.)

Keywords:Gallium nitride, Deep Level, Deep Level Transient Spectroscopy (DLTS)

We have investigated deep level traps in n-type GaN homoepitaxially grown by MOVPE where point defects are intentionally introduced. In this study, we examined deep levels in n-GaN irradiated by high-energy 2-MeV electron beam which induces both Ga and N atoms displacement. In the DLTS spectra of the high-energy (less than 400 keV) irradiation samples, three additional peaks were observed compared with the low-energy irradiation samples, indicating that the origin of the three peaks is Ga vacancy or interstitial.