The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-20] Study of Insulated Gate GaN-based Transistor using Chemical Vapor Deposition Method Enhanced by Atmic Oxygen at the ground level

Kento Nakamura1, Makoto Baba1, Hiroshi Okada1, Masakazu Furukawa2, Hiroto Sekiguchi1, Keisuke Yamane1, Akihiro Wakahara1 (1.Toyohashi Univ. Tech., 2.ARLC)

Keywords:nitride semiconductor, semiconductor process engineering