Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

Kanta Kudo; Ishii Kyouhei; Ono Mizuki; Fujiwara Yuki; Kaneko Kentaro; Yamaguchi Tomohiro; Honda Toru; Fujita Shizuo; Onuma Takeyoshi

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

4:30 PM - 4:45 PM

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

〇Kanta Kudo¹, Ishii Kyouhei², Ono Mizuki¹, Fujiwara Yuki¹, Kaneko Kentaro², Yamaguchi Tomohiro¹, Honda Toru¹, Fujita Shizuo², Onuma Takeyoshi¹ (1.Kogakuin Univ, 2.Kyoto Univ)

Keywords:MgZnO, VUV, Quantum wells

Rock-salt structure magnesium zinc oxide(RS-Mg_xZn_1-xO) is expected to be applied as a light-emitting material in the VUV as one of wide-gap semiconductors. In this study, experiments were conducted to clarify quantum confinement effect in RS-Mg_xZn_1-xO / MgO quantum well (QW) structure fabricated by mist CVD method from optical measurement. As a result, the quantum effect on the thin film was observed in the sample with the QW structure and showed the same tendency as the calculated value.