The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

4:45 PM - 5:00 PM

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

〇Tadayoshi Sakai1, Maki Kushimoto1, Manato Deki2, Yoshio Honda2,3, Hiroshi Amano2,4,5 (1.Nagoya Univ., 2.IMaSS, 3.IAR, 4.Akasaki RC, 5.VBL)

Keywords:transparent conductive oxide, oxide, UV-LED

紫外LEDの透明電極の実現に向け、酸化物材料のMgZnOに着目し、その初期検討として二元共スパッタリング法を用いた組成制御を行った。