The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

6:00 PM - 6:15 PM

△ [11p-S011-16] Fast operation of a WO3-based solid-state electrochromic transistor

〇Takaki Onozato1, Yukio Nezu1, Hai Jun Cho1,2, Hiromichi Ohta1,2 (1.IST-Hokkido Univ., 2.RIES-Hokkaido Univ.)

Keywords:electrochromic transistor, WO3, all-solid