The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[11p-S223-1~16] 13.8 Optical properties and light-emitting devices

Mon. Mar 11, 2019 1:45 PM - 6:00 PM S223 (S223)

Yasushi Nanai(Aoyama Univ.), Jun Tatebayashi(Osaka Univ.)

3:15 PM - 3:30 PM

[11p-S223-7] Investigation of Bi2O3 thin films as host of emission-active Er3+ ions

Housei Akazawa1 (1.NTT Device Innovation Center)

Keywords:Bi2O3, Er3+, photoluminescence

EDFA is a key device in optical telecommunication technologies. Its advanced style will be EDFA sections incorporated in a waveguide-based photo circuit. We now propose Bi2O3 as a new host material that can exhibit better perforomance than SiO2. We investigated sputter deposition of Bi2O3 thin films on Si substrate and established conditions at which satisfactory properties are achieved. By doping Er3+ ions, we observed infrared emissions from Er3+.