MBE growth of 1.5-&micro;m-band metamorphic InAs/GaInAs/GaAs quantum dots

Katsuyuki Watanabe; Wenbo Zhan; Masahiro Kakuda; Jinkwan Kwoen; Yasuhiko Arakawa

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 1:45 PM - 5:00 PM S422 (S422)

Hidetoshi Suzuki(Miyazaki Univ.), Kou Matsumoto(Taiyo Nippon Sanso)

3:30 PM - 3:45 PM

[11p-S422-5] MBE growth of 1.5-µm-band metamorphic InAs/GaInAs/GaAs quantum dots

〇Katsuyuki Watanabe¹, Wenbo Zhan¹, Masahiro Kakuda¹, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo)

Keywords:quantum dots, indium arsenide, metamorphic

We have systematically investigated the In composition dependence of GaInAs matrix of metamorphic InAs/GaInAs/GaAs quantum dots. We have observed the room-temperature quantum-dot photoluminescence ranged from 1.3 µm to 1.5 µm by increasing the In composition from 0.2 to 0.35.