Development of BGaN semiconductor detector for neutron imaging sensor

Yuri Takahashi; Takayuki Maruyama; Natsuki Yamada; Kazushi Ebara; Yuto Ohta; Hisaya Nakagawa; Shigeyoshi Usami; Yoshio Honda; Hiroshi Amano; Kazunobu Kojima; Shigefusa Chichibu; Yoku Inoue; Toru Aoki; Takayuki Nakano

Presentation information

Oral presentation

2 Ionizing Radiation » 2.1 Radiation physics and Detector fundamentals

[11p-S622-1~10] 2.1 Radiation physics and Detector fundamentals

Mon. Mar 11, 2019 1:00 PM - 3:30 PM S622 (S622)

Go Okada(Kanazawa Inst. of Tech.)

2:45 PM - 3:00 PM

[11p-S622-8] Development of BGaN semiconductor detector for neutron imaging sensor

〇Yuri Takahashi¹, Takayuki Maruyama¹, Natsuki Yamada¹, Kazushi Ebara¹, Yuto Ohta¹, Hisaya Nakagawa¹, Shigeyoshi Usami², Yoshio Honda³, Hiroshi Amano^3,4, Kazunobu Kojima⁵, Shigefusa Chichibu^3,5,6, Yoku Inoue¹, Toru Aoki⁷, Takayuki Nakano¹ (1.Shizuoka Univ., 2.Nagoya Univ., 3.IMaSS, Nagoya Univ., 4.Akasaki Research Center, 5.IMRAM, Tohoku Univ., 6.RCIQE, Hokkaido Univ., 7.R.I.E Shizuoka Univ.)

Keywords:BGaN, semiconductor, neutron