[11p-W321-1~14] 13.9 Compound solar cells

[11p-W321-12] Development of the GaAs//InGaAs dual junction solar cell with surface activated wafer bonding technique

〇Kentaroh Watanabe¹, Takashi Fukutani², Hassanet Sodabanlu¹, Yoshiaki Nakano^1,2, Masakazu Sugiyama^1,2 (1.RCAST, Univ. of Tokyo, 2.Eng, Univ. of Tokyo)

Keywords:multi-junction solar cell, surface activated bonding, III-V semiconductors

The surface activated wafer bonding is one of the promising method to make a mulit-layer structure which is difficult to compose by only the epitaxial growth techinique due to lattice mismatch. We fabricated the GaAs//InGaAs dual junction solar cell congtructing by the surface actibated bonding of the GaAs top and InP bottom cells respectively grown on GaAs and InP substrates. Finally, good multi-junction PV performance was obtained under AM1.5G illumination, which showed the 1.3 V of open circuit voltage, almost equivalent to the sum of Voc given by top and bottom cells.