[11p-W521-1~18] 17.3 層状物質

▲ [11p-W521-13] Sulfur vacancies degrade interface at valence band side in MoS₂ FET

〇Nan Fang¹、Kosuke Nagashio¹ (1.Tokyo Univ.)

キーワード：Sulfur vacancies, MoS2, valance band

Although stable p-type 2D-FET is required for complementary transistor operation, the transistor performance of defect-related p-type 2D channels, such as WSe₂, SnS₂ and so on, is generally low, compared with widely studied n-type MoS₂ FET. Here, Nb doped p-type MoS₂ crystals are available now. In this study, we study the hole transport of Nb-doped MoS₂ FET in order to reveal the interface states (D_it) at valance band (VB) side.