2:30 PM - 2:45 PM
[11p-W521-4] Performance Improvement in a HfS2 MOSFET by UV-O3 Surface Oxidation
Keywords:two-dimensional material, electronic device
Transition metal dichalcogenides are two-dimensional layered materials with finite bandgap and atomic layer thickness, which is attractive for the application of field-effect transistors (FETs). Considering the performance parameters for FETs, the channel material require sufficient bandgap to supress the off-state leakage and high electron mobility for high-speed operation. HfS2 is expected to exhibit high acoustic phonon limited electron mobility (∼1,800 cm2/Vs) and adequate bandgap (∼1.2 eV), which shows good potential for FET applications.
We have reported the FET operation of HfS2 MOSFET, but the trap states at the interface of HfS2 channel and gate dielectric deteriorated the subthreshold swing of the FET. In this presentation, we report the performance improvement of HfS2 MOSFET by UV-O3 treatment, which converted the surface layers into native high-κ oxide HfOx.
We have reported the FET operation of HfS2 MOSFET, but the trap states at the interface of HfS2 channel and gate dielectric deteriorated the subthreshold swing of the FET. In this presentation, we report the performance improvement of HfS2 MOSFET by UV-O3 treatment, which converted the surface layers into native high-κ oxide HfOx.