[11p-W521-1~18] 17.3 Layered materials

[11p-W521-8] Development of device simulators of ion-gated transition metal dichalcogenide transistors

〇Akiko Ueda¹, Yijin Zhang^2,3, Nobuyuki Sano⁴, Hiroshi Imamura¹, Yoshihiro Iwasa⁵ (1.AIST, 2.Osaka Univ., 3.Max Planck Inst., 4.Univ. Tsukuba, 5.Univ. Tokyo)

Keywords:Transition metal dichalchogenide, Drift diffusion simulation, Ionic gating

Ion-gated transition metal dichalcogenide transistors attract attention as devices with new functionalities due to the rich physical phenomena such as ambipolar transport, generation of circularly polarized light using electric field and superconductivity induced by high carrier densities. The device simulations on such ion-gated transistor devices have been not established yet despite its importance for the future design of device structures. We developed a drift-diffusion model on a 2D material, WSe₂ monolayer, attached with an ionic liquid, and succeeded in simulating the experimental results such as the bipolar transport. In this presentation, we explain the difference of the model from the conventional transistors with oxide layer.