[11p-W541-1~20] 15.4 III-V-group nitride crystals

[11p-W541-11] Improved uniformity of GaN grown by pico-second laser PLD with laser blanking

〇Kazuki Kodama¹, Nao Ogasawara¹, Daisuke Ueda¹ (1.Kyoto Inst. Tech.)

Keywords:pico-second laser PLD, laser blanking, GaN

GaN devices are expected for low-loss and high-voltage power conversion. To increase conversion efficiency, it is most significant to reduce contact resistance. In the previous report, low contact resistance was achieved by forming n+-GaN selective regrowth layer grown by pico-second laser PLD method on AlGaN / GaN heterostructure. However, there was a large issue of low uniformity of the sheet resistance. In this work, it was confirmed that incorporation of blanking time during laser irradiation improved the uniformity of the sheet resistance for PLD grown GaN.