The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

4:15 PM - 4:30 PM

[11p-W541-11] Improved uniformity of GaN grown by pico-second laser PLD with laser blanking

Kazuki Kodama1, Nao Ogasawara1, Daisuke Ueda1 (1.Kyoto Inst. Tech.)

Keywords:pico-second laser PLD, laser blanking, GaN

GaN devices are expected for low-loss and high-voltage power conversion. To increase conversion efficiency, it is most significant to reduce contact resistance. In the previous report, low contact resistance was achieved by forming n+-GaN selective regrowth layer grown by pico-second laser PLD method on AlGaN / GaN heterostructure. However, there was a large issue of low uniformity of the sheet resistance. In this work, it was confirmed that incorporation of blanking time during laser irradiation improved the uniformity of the sheet resistance for PLD grown GaN.