[11p-W810-1~17] 31.1 Focused Session "AI Electornics"

△ [11p-W810-3] Realizing multi-value switching in high-resistive Ta₂O_5-δ based ReRAM using Cu top-electrode

〇Yuanlin Li¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

Keywords:artificial synapse, ReRAM, analog switching

ReRAM (Resistive Random Access Memory) has been drawing researchers' attention for the possibility of realizing analog switching with features of non-volatile, high endurance and low power-consumption, just like synapses in animals' brain. The last time, we successfully realized the aforementioned analog switching with Ta₂O_5-δ based ReRAM samples using Cu top electrode. In this work, to satisfy the demand of building neural network in hardware, we focused on the characteristical differences caused by top electrode and the possibilities of high resistive switching to lower the power-consumption.