The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

4:15 PM - 4:30 PM

[11p-W834-11] Synthesis & Characterization of Ge-based Low Dimensional Material from Zintl Phase Compound, CaGe2

〇(M2)Vimal Saxena1, Hirokazu Tatsuoka1, Yasuhiro Hayakawa2, Naohisa Takahashi3 (1.GSIST Shizuoka Univ., 2.RIE Shizuoka Univ., 3.Yamaha Ad. Ma. Re. G)

Keywords:Zintl Compound, Germanium, Nanosheets

Low dimensional materials have revolutionized intricate applications in the field of atomic-scale electronic devices, surface sciences and energy storage devices by displaying enhanced material properties. With these low-dimensional materials, terahertz frequencies can be reached in atomic scale devices. Enhancement in Li-ion storage capacity of current batteries & improved zT of thermoelectric generators have also been reported by several research groups. In this work we attempt to synthesis & characterize Ge-based nanosheets from CaGe2, a Zintl phase compound, exhibiting layered morphology. A two-stage process methodology has been adopted to synthesis Ge-based nanosheets. Synthesis of CaGe2 was carried out by Vapor Phase Reaction of Ca and Ge used in their stoichiometric ratios. Upon successful synthesis, from the obtained H-functionalized Germanane is exfoliated using IP6 acid by topotactic de-intercalation of Ca atoms from the lattice sites.