The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

2:00 PM - 2:15 PM

[11p-W834-4] Application of Non-destructive Contact Probe for Internal Photoemission Spectroscopy

Michiko Yoshitake1, Deepak Sridhar1, Shinjiro Yagyu1 (1.NIMS)

Keywords:internal photo emission, Schottky barrier height, probe

Internal photo emission spectroscopy is a powerful tool to measure a barrier hight at interfaces for many electron devices. The thinner top metal electrode is preferable to make the light reaches the interfaces. The measurement of internal photo emission spectra is tried using the probe, which we have developed make an electric contact without destroying a very thin film.