The 66th JSAP Spring Meeting, 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11p-W834-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 11, 2019 1:15 PM - 6:30 PM W834 (W834)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

2:45 PM - 3:00 PM

[11p-W834-6] Effectiveness of two-step growth of BaSi2 films formed by sputtering

〇Taira Nemoto1, Satoshi Matsuno1, Masami Mesuda2, Hideto Kuramochi2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)

Keywords:semiconductor, sputtering