[11p-W933-1~11] Symposium on Crystal Science with Synchrotron Radiation

[11p-W933-8] Structural analysis of semiconductor materials and devices using synchrotron radiation nanobeam X-ray diffraction

〇Akira Sakai¹, Kazuki Shida¹, Akira Ueda¹, Tetsuya Tohei¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura² (1.Osaka Univ., 2.JASRI)

Keywords:nanobeam X-ray diffraction, group IV semiconductor epitaxial film, nitride semiconductor epitaxial film

We report on structural analysis of group IV semiconductor heteroepitaxial films and nitride semiconductor epitaxial films and devices. Nanobeam X-ray diffraction with a probe size of a few hundred nanometer performed at the beam line of SPring-8 enables us to reveal the lattice plane microstructures and their modulations caused by defects in materials. By using three dimensional (3D) reciprocal space mapping analysis, not only the lattice tilting and spacing but also the lattice twisting can simultaneously be characterized for exactly the same position in samples. Newly developed tomographic mapping method for analyzing stacked epitaxial films allows us to observe in depth variations of microstructures thereby to perform true 3D analysis. In addition, we have recently performed time-resolved operando observation for nitride-semiconductor-based HEMT devices using a pump-prove method in which applied voltage pulses are synchronized with pulsed X-ray incidence. Preliminary results of detecting lattice space variation caused by the piezoelectric effect of nitride semiconductor will be presented.