[12a-M101-7~11] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [12a-M101-7] Spin manipulation by spin-momentum locking in an InGaAs-based two-dimensional electron gas

〇Makoto Kohda^1,2,3、Takanori Okayasu¹、Junsaku Nitta^1,2,3 (1.Tohoku Univ.、2.Tohoku Univ. CSRN、3.Tohoku Univ. CSIS)

キーワード：Spin orbit interaction, Spin momentum locking

Spin-momentum locking, which constrains spin orientation perpendicular to electron momentum, provides a basic concept to control electron’s spin and charge flow in variety of material systems such as topological insulators, semiconductors, and heavy metals. Induced helical spin texture at the Fermi surface allows us to efficiently generate and detect spin polarization without an external magnetic field or magnetic materials.
While spin generation and spin detection using spin-momentum locking have been intensively explored at Rashba interfaces and topological surface states, spin manipulation has yet to be demonstrated: it remains the missing ingredient towards full set of spin control by spin-momentum locking. Here, we experimentally manifested spin manipulation by spin-momentum locking in a magnetic focusing device. In a two-dimensional system with strong spin-orbit interaction, spin orientation is preferentially directed toward the spin-orbit-induced magnetic field and remains focused in this direction due to spin-momentum locking.