[12a-M111-1~9] 15.7 Crystal characterization, impurities and crystal defects

[12a-M111-1] Comments on the Voronkov model (5) Fluxes of point defects

〇Masashi Suezawa¹, Ichiro Yonenaga² (1.No affiliation, 2.Tohoku Univ)

Keywords:Voronkov model, pair annihilation, flux

According o Voronkov, thermal equilibrium point defects come into crystals from liquids of silicon. The concentrations of point defects (vacancies and interstitials) were described with fluxes of vacancies and interstitials. The flux is defined to be the product of the concentration and mobility. The mobilities of vacancies and interstitials are different. Hence, some point defects exist after pair annihilation even when the fluxes are the same.