[12a-M121-1~9] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

〇ManHoi Wong¹、Ken Goto^2,3、Hisashi Murakami²、Yoshinao Kumagai²、Masataka Higashiwaki¹ (1.NICT、2.Tokyo Univ. Agricul. Technol.、3.Tamura Corp.)

キーワード：Ga2O3, vertical MOSFET, ion implantation

Vertical power switching devices are desirable for high-voltage applications since they allow for superior field termination, high current drives, and simplified thermal management. β-Ga₂O₃ is amenable to doping with both shallow donors (Si) and deep acceptors (Mg, N) by ion implantation with efficient dopant activation at a low thermal budget, thereby enabling device fabrication by a highly manufacturable all-ion-implanted process resembling that for SiC MOSFETs. In this work, a current aperture vertical β-Ga₂O₃ MOSFET is demonstrated by integration N-ion and Si-ion implantation doping.