[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

[12a-M121-4] Normally-Off β-Ga₂O₃ MOSFET with Nitrogen-Doped Channel

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Man Hoi Wong¹, Hong Phuc Than¹, Masataka Higashiwaki¹ (1.NICT)

Keywords:Gallium oxide (Ga2O3), Power device

Since β-Ga₂O₃ has a large band gap of 4.5 eV and a high dielectric breakdown electric field of 5 MV/cm or more, it attracts attention as a future power device semiconductor material. So far, we have realized a vertical normally-on MOSFET in which a current blocking layer was formed by ion implantation doping of nitrogen (N) functioning as a deep acceptor in β-Ga₂O₃. Here we report the fabrication and its characteristics of a lateral normally-off β-Ga₂O₃ MOSFET using N-doped Ga₂O₃ channel.