[12a-M121-1~9] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

〇QIN MAO¹、Eiki Suzuki¹、Atsushi Tamura¹、Koji Kita¹ (1.The Univ. of Tokyo)

キーワード：Ga2O3, MOS capacitor, Interface defect

To reveal the effect of annealing on SiO₂/Ga₂O₃ MOS interface, MOS capacitors were fabricated with various annealing conditions. We found the reduction of the density of defects by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing.