[12a-PA3-1~26] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▲ [12a-PA3-16] Electrical Properties of In₂O₃ and ITO Thin Films Prepared by Solution Process
using In(acac)₃ Precursor

〇(DC)Puneet Jain¹、Ken-ichi Haga¹、Eisuke Tokumitsu¹ (1.JAIST)

キーワード：Indium oxide, Indium tin oxide (ITO)

In this work, electrical properties of solution processed In₂O₃ and ITO films were studied using In(acac)₃ based source solutions. Sn precursors used in this work were tin acetylacetonate (Sn(acac)₂) and tin chloride (SnCl₂) while propionic acid (PrA) was used as a solvent. A resistivity of 2.5x10^-3 Ω.cm was obtained when the Sn content is 1%, which is comparable or larger than that of the films prepared by spay and dip coating methods. This is due to relatively small carrier concentration (1x10²⁰ cm^-3) of the films fabricated in this work, because we employed O₂ annealing.