The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

[12a-PA3-26] Dye removal properties of Zn-Al layered double hydroxide

Yuki Nanya1, 〇Koji Abe1 (1.Nagoya Inst. Tech.)

Keywords:Zn-Al LDH, Hydroxyde, Dye