[12a-PA4-1~9] 31.1 Focused Session "AI Electornics"

[12a-PA4-3] Resistive Switching Behavior of Ferrocene-containing Polyelectrolyte Multilayer

〇Akito Watanabe¹, Shunsuke Yamamoto¹, Masaya Mitsuishi¹ (1.IMRAM)

Keywords:resistive switching device, Layer-by-Layer film, Ferrocene

An organic resistive-switching type synapse-like device can be realized by using redox reaction for long-term potentiation (LTP) and ionic diffusion for short-term potentiation (STP). In this work, resistive-switching devices were fabricated with ferrocene-attached polyethyleneimine with different ferrocene content, and investigated switching behavior. As a result of current-voltage measurement, at low ferrocene content, hysteresis of ionic diffusion and redox reaction of ferrocene could be observed. As the ferrocene content was increased, it disappears and it turns out that transition from ionic conduction to electron conduction progresses.