The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[12a-PB4-1~23] 13.8 Optical properties and light-emitting devices

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PB4 (PB)

9:30 AM - 11:30 AM

[12a-PB4-16] Effect of crystal structure and defect on afterglow property of ZrO2

〇(M1)Kenji Sawamura1, Kenichiro Iwasaki1, Fumitaka Iwakura2, Yasushi Nakajima2, Takayuki Nakanishi1, Atsuo Yasumori1 (1.Tokyo Univ. Science, 2.Daiichi Kigenso)

Keywords:afterglow, Phosphor

Afterglow materials show long persistent luminescence after stopping excitation (usually UV irradiation). It is mainly used as a night-vision materials. Long persistent property is considered to arise from trap levels which can store the photo-excited electrons, while the detail mechanism of trap level is still unclear. Therefore, it is important to make the detail mechanism of trap level cleat in order to control the trap level precisely. In this study, the effects of the reductive annealing and the addition of Y2O3 on the long persistent luminescence property of ZrO2 were investigated to evaluate the influence of crystal structure and lattice defect.