[12a-PB4-1~23] 13.8 Optical properties and light-emitting devices

[12a-PB4-23] SAW induced PL properties in InAs quantum dot / wetting layer / GaAs structure , especially its properties of wetting layer

〇Hiroto Yamasawa¹, Toshio Matsusue¹, Bando Hiroyuki¹ (1.Chiba Univ)

Keywords:surface acoustic wave, wetting layer, GaAs