[12a-W521-1~10] 17.3 Layered materials

[12a-W521-3] MBE growth of TaSe₂ epitaxial thin films and their transport properties

〇Yuki Tanaka¹, Hideki Matsuoka¹, Masaki Nakano¹, Yoshihiro Iwasa^1,2 (1.Dept. of Appl. Phys., Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:superconductivity, transition metal dichalcogenide, molecular beam epitaxy

Ultrathin films of group-V transition-metallic dichalcogenides (TMDs ) represented by NbSe₂ are very interesting material system because they show unconventional superconducting state (Ising superconductivity) originating from broken inversion symmetry and large spin orbit coupling. In this work, we focus on TaSe₂, which is another group-V TMD having unique electronic structure different from NbSe₂. We fabricated high-quality TaSe₂ thin films by molecular beam epitaxy (MBE) and examined their electrical transport properties.