The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[12a-W521-1~10] 17.3 Layered materials

Tue. Mar 12, 2019 9:00 AM - 11:30 AM W521 (W521)

Tomoki Machida(Univ. of Tokyo)

10:30 AM - 10:45 AM

[12a-W521-7] Optical properties of monolayer WS2–WSe2 in-plane heterostructures

〇(DC)Masafumi Shimasaki1, Naoki Wada2, Yasumitsu Miyata2, Kazunari Matsuda1, Yuhei Miyauchi1 (1.Kyoto Univ., 2.Tokyo Metro Univ.)

Keywords:atomically thin material, heterostructure, transition metal dichalcogenide

In-plane heterostructure of transition metal dichalcogenides shows the lattice mismatch or the formation of semiconductor alloy at the interface, which wouldn’t happen in general sample structure so far. Thus we can expect new optical properties emerge in the structure.
In this study, we evaluated optical measurement for the in-plane heterostructure of WS2–WSe2 by using space-resolved PL method. When we excited the interface, the luminescent peak energy clearly changed depending on the relative distance from interface. And we could observe PL spectrum from WSe2 side even though only WS2 side was excited.
These results imply that semiconductor alloy was formed at the interface, which leads to potential gradient, and exciton transport happened from WS2 side to WSe2 side.