[12a-W541-1~12] 15.4 III-V-group nitride crystals

[12a-W541-12] Effects of extra metals added during the acidic ammonothermal growth of GaN crystals

〇Daisuke Tomida¹, Quanxi Bao^1,3, Makoto Saito^1,2, Kohei Kurimoto³, Fukuma Sato¹, Tohru Ishiguro¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corp., 3.Japan Steel Works)

Keywords:nitride semiconductor, ammonothermal

We investigated the effect of metal addition on the crystal growth rate and crystal quality of gallium nitride grown by the acidic ammonothermal method, with ammonium fluoride as a mineralizer. Al, Si, Ca and Ti were added and crystal growth was achieved by the ammonothermal method. The crystal growth rate decreased when the metals were added. However, when aluminum was added, the optical quality and crystallinity of the grown gallium nitride crystals improved. Thus, we found that high quality crystals could be obtained by adding Al.